Dr. Khin Maung Latt

Dr. Khin Maung Latt

  1. Applied Physics
  2. Vacuum Science and Technology
  3. Materials Science and Engineering
  4. Materials Science in Semiconductor Processing

1. Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing
Materials Science and Engineering B, Volume 94, Issue 1, 15 June 2002, Pages 111-120
Khin Maung Latt, Y. K. Lee, T. Osipowicz and H. S. Park

2. Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
Materials Science and Engineering B, Volume 90, Issues 1-2, 7 March 2002, Pages 25-33
Khin Maung Latt, H. S. Park, H. L. Seng, T. Osipowicz, Y. K. Lee and S. Li

3. Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2
Materials Science and Engineering B, Volume 68, Issue 2, 27 December 1999, Pages 99-103
Y. K. Lee, Khin Maung Latt, K. JaeHyung, T. Osipowicz and K. Lee

4. The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure
Materials Science and Engineering B, Volume 84, Issue 3, 20 July 2001, Pages 217-223
Khin Maung Latt, Y. K. Lee, S. Li, T. Osipowicz and H. L. Seng

5. Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
Materials Science and Engineering B, Volume 83, Issues 1-3, 21 June 2001, Pages 1-7
Khin Maung Latt, Kangsoo Lee, Thomas Osipowicz and Y. K. Lee

6. Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2
Materials Science and Engineering B, Volume 77, Issue 3, 29 September 2000, Pages 282-287
Y. K. Lee, Khin Maung Latt, Kim JaeHyung, Thomas Osipowicz, Chiam Sher-Yi and Kangsoo Lee

7. Characterization of interfacial reactions between ionized metal plasma deposited Al–0.5 wt.% Cu and Ti on SiO2
Materials Science and Engineering B, Volume 77, Issue 1, 7 August 2000, Pages 101-105
Y. K. Lee, Khin Maung Latt, S. Li, T. Osipowicz and S. Y. Chiam

8. Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2
Materials Science in Semiconductor Processing, Volume 3, Issue 3, June 2000, Pages 179-184
Y. K. Lee, Khin Maung Latt, Kim Jaehyung and Kangsoo Lee

9. Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure
Materials Science in Semiconductor Processing, Volume 3, Issue 3, June 2000, Pages 191-194
Y. K. Lee, Khin Maung Latt, Thomas Osipowicz and Cham Sher-Yi

10. Effect of heat transfer on the C49–C54 phase transformation in TiSi2 thin film
Materials Science in Semiconductor Processing, Volume 2, Issue 4, 1999,Pages 329-333
Zhang Lin, Khin Maung Latt and Y. K. Lee

11. Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
Khin Maung Latt, Y. K. Lee, H. L. Seng, T. Osipowicz, Journal of Materials Science, Volume 36, Number 24, Page 5845 – 5851, December 2001

12. Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure
Khin Maung Latt, C. Sher-Yi, T. Osipowicz, K. Lee, Y. K. Lee, Journal of Materials Science, Volume 36, Number 23 , 5705 – 5712, December 2001

13. Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
Khin Maung Latt, Y. K. Lee, J. A. Van Kan, A. A. Mahabai, Journal of Materials Science, Volume 36, Number 22 5475 – 5480

14. Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2,
Khin Maung Latt, H. S. Park, S. Li, Liu Rong, T. Osipowicz, W. G. Zhu, Y. K. Lee, Volume 37, Number 10, Journal of Materials Science 1941 – 1949

15. Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure,
Y. K. Lee, Khin Maung Latt, Kim Jaehyung, T. Osipowicz, Sher-Yi Chiam, Kangsoo Lee, Journal of Materials Science, Volume 35, Number 23 , 5857 – 5860, December 2000

16. Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure,
Khin Maung Latt, Kangsoo Lee and Y. K. Lee, Journal of Materials Science Letters , Volume 20, Number 6 559 – 562, March 2001

17. High Density Diffusion Barrier of Ionized Metal Plasma Deposited Ti in Al-0.5%Cu/Ti/SiO2/Si Structure,
S. Li, Y.K. Lee, W. Gao, T. White, Z.L. Dong and Khinn Maung Latt, Journal of Vacuum Science and Technology B 19 (2), 388 (2001).

18. Formation of Cu Diffusion Channels in Ta layer of Cu/Ta/SiO2/Si Structure,
S. Li, Z.L. Dong, Khin Maung Latt, H.S. Park and T. White; Appl. Phys. Lett. 80, April 1 (2002).

19. Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structure
K. M. Latt, H. S. Park, H. L. Seng, T. Osipowicz, Y. K. Lee, JOURNAL OF MATERIALS SCIENCE 37 (2002) 1– 8

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